Proper Scaling of the Anomalous Hall Effect

TL;DR

This paper presents a new scaling method for the anomalous Hall effect in epitaxial Fe films, clarifying the roles of different scattering mechanisms and exposing flaws in previous models.

Contribution

It introduces a novel scaling approach that distinctly identifies intrinsic and extrinsic mechanisms in the anomalous Hall effect, improving understanding of underlying physics.

Findings

Standard plots of anomalous Hall resistivity are flawed.

A new scaling method clarifies the roles of scattering mechanisms.

Intrinsic Berry curvature and extrinsic mechanisms are unambiguously distinguished.

Abstract

Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result appropriately accounted for the role of phonons, thereby clearly exposing the fundamental flaws of the standard plot of the anomalous Hall resistivity versus longitudinal resistivity. A new scaling has been thus established that allows an unambiguous identification of the intrinsic Berry curvature mechanism as well as the extrinsic skew scattering and side-jump mechanisms of the anomalous Hall effect.