Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

TL;DR

This paper demonstrates that acoustic phonons are the main cause of dephasing in excitonic Rabi rotations in InGaAs/GaAs quantum dots, with experimental results aligning with theoretical models.

Contribution

It provides experimental evidence linking acoustic phonons to excitation-induced dephasing in quantum dot Rabi rotations, supported by quantitative agreement with a phonon model.

Findings

Acoustic phonons are identified as the primary source of dephasing.

The dephasing rate matches predictions from an acoustic-phonon model.

Temperature dependence confirms phonon involvement in EID.

Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.