Self-consistent Wigner distribution function study of gate-voltage controlled triple-barrier resonant tunnelling diode

TL;DR

This study uses a self-consistent numerical approach to analyze how gate voltage controls electron transport in a triple-barrier resonant tunnelling diode, revealing key effects on current characteristics and device behavior.

Contribution

It introduces a self-consistent Wigner-Poisson method to investigate gate-controlled electron transport in TBRTDs, highlighting new physical insights into device operation.

Findings

Enhanced peak-to-valley ratio up to ~10

Linear current-voltage behavior in NDR region

Bistability in current-voltage characteristics

Abstract

The electron transport through the triple-barrier resonant tunnelling diode (TBRTD) have been studied by the self-consistent numerical method for the Wigner-Poisson problem. The electron flow through the TBRTD can be controlled by the gate voltage applied to one of the potential well regions. For different gate voltage values we have determined the current-voltage characteristics, potential energy profiles, and electron density distribution. We have found the enhancement of the peak-to-valley ratio (up to $\sim$10), the appearance of the linear current versus bias voltage behaviour within the negative-differential resistance region, and the bistability of the current-voltage characteristics. The analysis of the self-consistent potential energy profiles and electron density distribution allowed us to provide a physical interpretation of these properties.