Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

TL;DR

This study demonstrates room temperature enhancement of spontaneous emission from quantum dots in photonic crystal cavities, achieving a 2.8-fold increase in emission rate at telecom wavelengths, with potential applications in quantum photonics.

Contribution

It reports the first demonstration of spontaneous emission enhancement from quantum dots in photonic crystal cavities at room temperature in the C-band.

Findings

Cavity quality factor of 44,000 achieved

Emission rate enhanced by a factor of 2.8 at 300 K

Cavity mode has ultra-low modal volume (~1.2 λ/n)^3

Abstract

We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.