Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

TL;DR

This paper presents a theoretical study on how nanoscale corrugation in semiconductor thin films can be used to tune their electrical resistivity by enhancing electron-electron scattering due to curvature effects.

Contribution

It introduces a theoretical model linking nanoscale geometric corrugation to increased resistivity via curvature-induced electron scattering mechanisms.

Findings

Corrugation leads to stepwise increases in resistivity.

Electron-electron scattering is significantly enhanced by nanoscale curvature.

Curvature-induced potential energy affects electron motion in thin films.

Abstract

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.