Controlled growth of InAs nanowires on engineered substrates

TL;DR

This paper demonstrates the controlled growth of InAs nanowires on engineered substrates using Au-assisted methods, analyzing their morphology and structure to advance integration with silicon electronics.

Contribution

It introduces a novel approach for growing InAs nanowires on engineered substrates, enabling better integration with silicon-based electronics.

Findings

Successful growth of InAs nanowires on GaAs/AlGaAs heterostructures and Si(111) substrates.

Detailed morphological and structural analysis of nanowires and substrates.

Potential for integrating III-V nanostructures with silicon electronics.

Abstract

We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm \mu m}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures.