New Theoretical Approach to Quantum Size Effects of Interactive Electron-hole in Spherical Semiconductor Quantum Dots
Baptiste Billaud (LPTHE, LPTM), Marco Picco (LPTHE), T.T. Truong, (LPTM)

TL;DR
This paper introduces a new pseudo-potential method to better analyze quantum size effects of interacting electron-hole pairs in spherical semiconductor quantum dots, yielding results closer to experimental data.
Contribution
A novel pseudo-potential approach for analytical computation of quantum size effects in electron-hole systems in quantum dots.
Findings
Numerical results align more closely with experimental data.
Analytical computations are simplified with the new method.
Supports the physical assumptions with stronger theoretical backing.
Abstract
The issue of quantum size effects of interactive electron-hole systems in spherical semiconductor quantum dots is put to question. A sharper theoretical approach is suggested based on a new pseudo-potential method. In this new setting, analytical computations can be performed in most intermediate steps lending stronger support to the adopted physical assumptions. The resulting numerical values for physical quantities are found to be much closer to the experimental values than those existing so far in the literature.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Quantum and electron transport phenomena
