Possible Phase Transition Deep Inside the Hidden Order Phase of Ultraclean URu2Si2
H. Shishido, K. Hashimoto, T. Shibauchi, T. Sasaki, H. Oizumi, N., Kobayashi, T. Takamasu, K. Takehana, Y. Imanaka, T. D. Matsuda, Y. Haga, Y., Onuki, Y. Matsuda

TL;DR
This study reveals a possible internal phase transition within the hidden order phase of URu2Si2, characterized by a Fermi surface reconstruction and quantum oscillations, suggesting an itinerant electron mechanism.
Contribution
The paper provides evidence of an internal phase transition inside the hidden order phase of URu2Si2 using high-purity crystals and high-field measurements, highlighting a Fermi surface change.
Findings
An anomaly in Hall resistivity at 22.5 T indicating Fermi surface reconstruction.
Appearance of a novel quantum oscillation above a specific magnetic field.
Evidence supporting an itinerant electron model for the hidden order transition.
Abstract
To elucidate the underlying nature of the hidden order (HO) state in heavy-fermion compound URu2Si2, we measure electrical transport properties of ultraclean crystals in a high field/low temperature regime. Unlike previous studies, the present system with much less impurity scattering resolves a distinct anomaly of the Hall resistivity at H*=22.5 T well below the destruction field of the HO phase ~36 T. In addition, a novel quantum oscillation appears above a magnetic field slightly below H*. These results indicate an abrupt reconstruction of the Fermi surface, which implies a possible phase transition well within the HO phase caused by a band-dependent destruction of the HO parameter. The present results definitely indicate that the HO transition should be described by an itinerant electron picture.
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