Monolithic Pixel Sensors in Deep-Submicron SOI Technology

TL;DR

This paper reports on the design, fabrication, and initial testing of monolithic pixel sensors using deep-submicron SOI technology, demonstrating their potential for charged particle detection and imaging.

Contribution

It introduces a novel approach to monolithic pixel sensors utilizing deep-submicron SOI processes with integrated CMOS electronics and substrate contact via vias.

Findings

Successful fabrication of prototypes in 0.15 and 0.20 micrometer FD-SOI processes.

Preliminary performance results show promising sensor capabilities.

Design insights for integrating analog and digital pixels in SOI technology.

Abstract

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.