Carrier mean free path and temperature imbalance in mesoscopic wires
Marcelo Kuroda, Jean-Pierre Leburton

TL;DR
This paper presents a model linking carrier mean free path and temperature imbalance in mesoscopic wires, enabling extraction of mean free path from electrical and distribution measurements, supported by experimental data.
Contribution
It introduces a method to determine carrier mean free path in nanowires through combined electrical and distribution function analysis, bridging theory and experiment.
Findings
Model agrees with copper nanowire experiments
Provides interpretation of thermal broadening effects
Shows scaling of distribution with bias
Abstract
Non-coherent electronic transport in metallic nanowires exhibits different carrier temperatures for the non-equilibrium forward and backward populations in the presence of electric fields. Depending on the mean free path that characterizes inter-branch carrier backscattering transport regimes vary between the ballistic and diffusive limits. In particular, we show that the simultaneous measurements of the electrical characteristics and the carrier distribution function offer a direct way to extract the carrier mean free path even when it is comparable to the conductor length. Our model is in good agreement with the experimental work on copper nanowires by Pothier {\it et al.} [Phys. Rev. Lett. {\bf 79}, 3490 (1997)] and provides an elegant interpretation of the inhomogeneous thermal broadening observed in the local carrier distribution function as well as its scaling with external bias.
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Graphene research and applications · Semiconductor materials and devices
