Amplification of the induced ferromagnetism in diluted magnetic semiconductor

TL;DR

This paper demonstrates that a ferromagnetic metal can significantly amplify induced ferromagnetism in a nearby diluted magnetic semiconductor, expanding the temperature range of magnetization which is promising for practical applications.

Contribution

The study introduces a mean field theory model showing amplified ferromagnetism at the interface of ferromagnetic metals and diluted magnetic semiconductors, highlighting a new mechanism for enhancing magnetic properties.

Findings

Significant amplification of ferromagnetism near the interface.

Expansion of the temperature range for magnetization.

Potential implications for spintronic device applications.

Abstract

Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, e.a., Phys. Rev. Lett., 101, 267201 (2008)]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, induced by the ferromagnetic metal in the near-interface semiconductor area, due to the indirect interaction of magnetic impurities. This results in the substantial expansion of the temperature range where the magnetization in the boundary semiconductor region exists, that might be important for possible practical applications.