Predictability of reset switching voltages in unipolar resistance switching

TL;DR

This paper presents a scaling relationship between reset current and nonlinear I-V characteristics in unipolar resistance switching, enabling prediction of reset voltages and improved memory operation accuracy across different capacitor materials.

Contribution

It introduces a universal scaling law linking reset current to nonlinear I-V behavior, allowing voltage prediction independent of device size and material.

Findings

Reset voltage can be predicted from nonlinear I-V coefficients.

The scaling law applies to NiO, TiO2, and FeOy capacitors.

An error correction scheme improves separation of reset and set voltages.

Abstract

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations.