Formation of Epitaxial MnBi Layers on (Ga,Mn)As

TL;DR

This study investigates the epitaxial growth of MnBi layers on (Ga,Mn)As using synchrotron photoelectron spectroscopy, revealing interface structure and surface stability during initial growth stages.

Contribution

It provides detailed insights into the epitaxial formation and interface structure of MnBi layers on (Ga,Mn)As, highlighting surface reconstruction preservation and degradation thresholds.

Findings

Epitaxial MnBi layers form on (Ga,Mn)As with a specific interface between As and Bi.

The 1x2 surface reconstruction of MnAs persists up to 2 ML of MnBi.

Surface degradation occurs beyond 2 ML of MnBi growth.

Abstract

The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs.