Tuning of structure inversion asymmetry by the $\delta$-doping position in (001)-grown GaAs quantum wells

TL;DR

This study demonstrates that the structure inversion asymmetry in GaAs quantum wells can be precisely controlled by adjusting the delta-doping layer position, impacting the material's electronic properties.

Contribution

It introduces a method to tune the structure inversion asymmetry in GaAs quantum wells through delta-doping position, enabling better control of quantum well properties.

Findings

SIA can be tailored by delta-doping position.

Symmetrically-doped structures show impurity segregation-induced SIA.

Almost equal structure and bulk inversion asymmetry achieved.

Abstract

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.