Acoustoelectric luminescence from a field-effect n-i-p lateral junction

TL;DR

This paper demonstrates a surface-acoustic-wave driven light-emitting diode in a lateral n-i-p junction, enabling controlled acoustoelectric transport and electroluminescence for potential quantum-cryptography applications.

Contribution

It introduces a novel SAW-driven light-emitting diode in a lateral n-i-p structure with integrated gating and interdigitated transducers for controlled acoustoelectric effects.

Findings

Successful demonstration of acoustoelectric transport.

Controlled electroluminescence via SAW and gating.

Potential application in quantum cryptography.

Abstract

A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.