Atomistic determination of flexoelectric properties of crystalline dielectrics
R. Maranganti, P. Sharma

TL;DR
This paper uses a microscopic lattice dynamics approach to estimate the flexoelectric tensor in various crystalline dielectrics, comparing results with existing data and examining empirical scaling laws.
Contribution
It provides new atomistic estimates of the flexoelectric tensor for multiple crystal types and critically evaluates existing experimental and theoretical values.
Findings
Estimated flexoelectric tensors for cubic ionic crystals, perovskites, and semiconductors.
Identified discrepancies between different experimental estimates.
Re-assessed the validity of empirical scaling relationships for flexoelectric coefficients.
Abstract
Upon application of a uniform strain, internal sub-lattice shifts within the unit cell of a non-centrosymmetric dielectric crystal result in the appearance of a net dipole moment: a phenomenon well known as piezoelectricity. A macroscopic strain gradient on the other hand can induce polarization in dielectrics of any crystal structure, even those which possess a centrosymmetric lattice. This phenomenon, called flexoelectricity, has both bulk and surface contributions: the strength of the bulk contribution can be characterized by means of a material property tensor called the bulk flexoelectric tensor. Several recent studies suggest that strain-gradient induced polarization may be responsible for a variety of interesting and anomalous electromechanical phenomena in materials including electromechanical coupling effects in non-uniformly strained nanostructures, dead layer effects in…
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