Electron scattering due to dislocation wall strain field in GaN layers

TL;DR

This paper investigates how strain fields from dislocation walls affect electron scattering and mobility in GaN layers, combining theoretical modeling with experimental data fitting to understand low-temperature transport phenomena.

Contribution

It introduces a theoretical model for dislocation wall strain-induced scattering in GaN and demonstrates its significance in low-temperature mobility analysis.

Findings

Dislocation wall strain significantly impacts electron scattering at low temperatures.

Theoretical results align with experimental mobility data when including this scattering mechanism.

Strain-induced scattering is comparable to impurity and dislocation scattering in GaN.

Abstract

The effect of edge-type dislocation wall strain field on the Hall mobility in n-type epitaxial GaN was theoretically investigated through deformation potential within the relaxation time approach. It was found that this channel of scattering can play a considerable role in the low-temperature transport at the certain set of the model parameters. The low temperature experimental data were fitted by including this mechanism of scattering along with ionized impurities and charge dislocation ones.