The metal-insulator transition in semiconductors
Fedor V.Prigara
TL;DR
This paper investigates how the temperature-dependent band gap affects the number of elementary excitations in semiconductors and discusses local lattice distortions within crystalline domains.
Contribution
It introduces a model accounting for temperature-dependent band gaps and explores local lattice distortions in semiconductors.
Findings
Number density of excitations varies with temperature and band gap changes.
Local lattice distortions influence semiconductor properties.
Theoretical framework for temperature effects on semiconductors.
Abstract
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
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Taxonomy
TopicsAdvanced Materials and Semiconductor Technologies · Semiconductor Quantum Structures and Devices