Crossover from First to Second-Order Transition in Frustrated Ising Antiferromagnetic Films
X. T. Pham Phu (LPTM), V. Thanh Ngo (IOP), Hung the Diep (LPTM)

TL;DR
This study investigates how the phase transition in frustrated Ising antiferromagnetic films changes from first to second order as the film thickness decreases, revealing a crossover at four atomic layers with distinct surface and interior behaviors.
Contribution
It demonstrates the crossover from first to second-order phase transition in frustrated Ising films as a function of thickness using Monte Carlo simulations and Green's function methods.
Findings
Transition remains first order down to four FCC cells
Second-order transition occurs at two FCC cells (four atomic layers)
Surface magnetization is larger than interior and undergoes a second-order transition
Abstract
In the bulk state, the Ising FCC antiferromagnet is fully frustrated and is known to have a very strong first-order transition. In this paper, we study the nature of this phase transition in the case of a thin film, as a function of the film thickness. Using Monte Carlo (MC) simulations, we show that the transition remains first order down to a thickness of four FCC cells. It becomes clearly second order at a thickness of two FCC cells, i.e. four atomic layers. It is also interesting to note that the presence of the surface reduces the ground state (GS) degeneracy found in the bulk. For the two-cell thickness, the surface magnetization is larger than the interior one. It undergoes a second-order phase transition at a temperature while interior spins become disordered at a lower temperature . This loss of order is characterized by a peak of the interior spins susceptibility…
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