Optical constants of silicon carbide for astrophysical applications. II. Extending optical functions from IR to UV using single-crystal absorption spectra
A.M. Hofmeister, K.M. Pitman, A.F. Goncharov, A.K. Speck

TL;DR
This study extends the optical constants of silicon carbide from IR to UV using new absorption spectra, improving models of astrophysical dust and distinguishing effects of structure and impurities.
Contribution
It introduces a novel difference method to accurately derive optical functions across a broad spectral range for various SiC structures, enhancing astrophysical dust modeling.
Findings
Optical functions for different SiC structures are nearly identical in IR to visible regions.
Impurities cause a redshift in the UV absorption onset of SiC.
Structural and chemical effects significantly alter SiC's spectral features, aiding space dust analysis.
Abstract
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm ( 8--0.28 m) and used to improve the accuracy of optical functions ( and ) from the infrared (IR) to the ultraviolet (UV). Comparison with previous 6--20 m thin-film spectra constrains the thickness of the films and verifies that recent IR reflectivity data provide correct values for in the IR region. We extract and needed for radiative transfer models using a new ``difference method'', which utilizes transmission spectra measured from two SiC single-crystals with different thicknesses. This method is ideal for near-IR to visible regions where absorbance and reflectance are low and can be applied to any material. Comparing our results with previous UV…
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