Spin-orbit interaction and weak localization in heterostructures

TL;DR

This paper develops a comprehensive theory for weak localization in high-mobility 2D semiconductor heterostructures, accounting for spin-orbit interactions and magnetic effects, matching experimental observations across regimes.

Contribution

It provides a unified analytical framework for magnetoresistance considering both diffusive and ballistic regimes, including spin-orbit effects and the transition between localization regimes.

Findings

The theory accurately describes experimental magnetoresistance data.

It reveals the mutual compensation of Rashba and Dresselhaus effects.

The model predicts the in-plane magnetic field influence on conductivity.

Abstract

Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of classically weak magnetic fields and for arbitrary strengths of bulk and structural inversion asymmetry contributions to the spin splitting. The theory serves for both diffusive and ballistic regimes of electron propagation taking into account coherent backscattering and nonbackscattering processes. The transition between weak localization and antilocalization regimes is analyzed. The manifestation of the mutual compensation of Rashba and Dresselhaus spin splittings in magnetoresistance is discussed. Perfect description of experimental data on anomalous magnetoresistance in high-mobility heterostructures is demonstrated. The in-plane magnetic field dependence of the conductivity caused by an interplay of the spin-orbit splittings and Zeeman effect is described theoretically.