Improved Estimate of the Occupancy by Beamstrahlung Electrons in the ILD Vertex Detector

TL;DR

This paper evaluates how beamstrahlung-induced electron pairs affect vertex detector occupancy in the ILD, comparing sensor technologies and the effect of an anti-DID field to improve detector performance.

Contribution

It provides a comparative analysis of sensor technologies and assesses the impact of an anti-DID field on vertex detector occupancy due to beamstrahlung electrons.

Findings

Occupancy levels vary significantly between sensor types.

Anti-DID field reduces backscattered electron impact.

Sensor technology choice influences detector performance.

Abstract

The impact of the incoherent electron-positron pairs from beamstrahlung on the occupancy of the vertex detector (VXD) for the International Large Detector concept (ILD) has been studied, based on the standard ILD simulation tools. The occupancy was evaluated for two substantially different sensor technology in order to estimate the importance of the latter. The influence of an anti-DID field removing backscattered electrons has also been studied.