Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy
Keji Lai, Hailin Peng, Worasom Kundhikanjana, David T. Schoen, Chong, Xie, Stefan Meister, Yi Cui, Michael A. Kelly, Zhi-Xun Shen

TL;DR
This study uses microwave impedance microscopy to reveal nanoscale electronic inhomogeneity in In2Se3 nanoribbons, identifying multiple phases with vastly different resistivities and demonstrating local phase change memory effects.
Contribution
First application of near-field microwave impedance microscopy to directly image electronic inhomogeneity in In2Se3 nanoribbons at nanoscale.
Findings
Multiple phases with resistivity differences of six orders of magnitude identified
Inhomogeneous length scale of 100 nm observed
Phase change memory effects recorded locally with opposite signals
Abstract
Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors, colossal magnetoresistance effect, phase-change memories, and domain switching operations. Direct imaging on dielectric properties of these local phases, however, presents a big challenge for existing scanning probe techniques. Here, we report the observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons by near-field scanning microwave impedance microscopy. Multiple phases with local resistivity spanning six orders of magnitude are identified as the coexistence of…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
