Kinetics of Exciton Self-Trapping Induced Defect Accumulation in Rare-Gas Solids

TL;DR

This study investigates how exciton self-trapping leads to defect accumulation in rare-gas solids, using photoluminescence to analyze the kinetics and develop a simple model for the process.

Contribution

It introduces a kinetic model for defect accumulation in rare-gas solids based on photoluminescence data, providing new insights into the process.

Findings

Determined kinetic parameters for defect accumulation in solid Xe and Ne.

Developed a linear transformation method to analyze luminescence time dependence.

Validated the kinetic model with experimental data.

Abstract

The kinetics of the process of defect accumulation in rare-gas solids as a result of exciton self-trapping was studied using the selective vacuum ultraviolet photoluminescence method for monitoring of the crystal structure of the samples. The simple kinetic model of defect accumulation in rare-gas samples was applied to the fitting of the dose dependences of luminescence from solid Xe and Ne. The characteristic kinetic parameters were obtained by linear transformation of the time dependence of luminescence intensity of "defect" subbands.