Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3

TL;DR

This study demonstrates pulse width controlled resistivity switching in Bi0.8Sr0.2MnO3 at room temperature, showing significant resistivity changes induced by pulse sequences, which could be useful for memory devices.

Contribution

It reveals a novel pulse width controlled resistivity switching mechanism in Bi0.8Sr0.2MnO3 at room temperature, expanding understanding of electroresistance effects.

Findings

Resistivity increases by 55% with pulse width reduction from 100 ms to 25 ms.

Bi-level and multi-level resistivity states can be achieved with pulse sequences.

Resistivity change is not solely due to temperature variations.

Abstract

We report pulsed as well as direct current/voltage induced electroresistance in Bi0.8Sr0.2MnO3 at room temperature. It is shown that bi-level and multi-level resistivity switching can be induced by a sequence of pulses of varying pulse width at fixed voltage amplitude. Resistivity increases abruptly (= 55 % at 300 K) upon reducing pulse width from 100 ms to 25 ms for a fixed electric field (E = 2 V/cm2) of 200 ms pulse period. The resistivity switching is accompanied by a periodic change in temperature which alone can not explain the magnitude of the resistivity change.