Spin torque from tunneling through impurities in a magnetic tunnel junction
Turan Birol, Piet W. Brouwer

TL;DR
This paper calculates how impurities in a magnetic tunnel junction influence spin transfer torque, revealing dependence on contact polarization and magnetization angles, with implications for spintronic device control.
Contribution
It introduces a model for spin torque from impurity-assisted tunneling, highlighting the effects of contact polarization and magnetization angle dependence.
Findings
Torque is in the plane of magnetizations and proportional to sin(θ) for weak polarization.
Higher polarization introduces a significant out-of-plane torque component.
The torque's dependence on θ varies with polarization strength.
Abstract
We calculate the contribution to the spin transfer torque from sequential tunneling through impurities in a magnetic tunnel junction. For a junction with weakly polarized ferromagnetic contacts, the torque is found to be in the plane spanned by the magnetizations of the ferromagnetic contacts and proportional to , where is the angle between the magnetic moments. If the polarization is larger, the torque acquires a significant out-of-plane component and a different dependence on .
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Taxonomy
TopicsQuantum and electron transport phenomena · Magnetic properties of thin films · Advancements in Semiconductor Devices and Circuit Design
