Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer
Jun Sato, Katsuyoshi Matsushita, Hiroshi Imamura
TL;DR
This paper theoretically investigates how a nano-oxide-layer confined structure enhances the magnetoresistance of a domain wall in a current-perpendicular-to-plane setup, confirming previous experimental findings.
Contribution
It introduces a numerical method to calculate magnetoresistance in a 3D CCP structure, demonstrating the enhancement effect due to the nano-oxide-layer.
Findings
MR ratio is enhanced by the CCP structure
Numerical solutions confirm experimental results
Finite element method effectively models the system
Abstract
We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a current-confined-path (CCP) structure made of a nano-oxide-layer (NOL). In order to calculate the MR ratio of the system, the continuity equations for charge and spin currents are numerically solved with the three-dimensional CCP geometry by use of finite element method. It is confirmed that the MR ratio is enhanced by the CCP structure, which is consistent with the experimental results.
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