Frequency dependence of the radiative decay rate of excitons in self-assembled quantum dots: experiment and theory
S{\o}ren Stobbe, Jeppe Johansen, Philip Tr{\o}st Kristensen, J{\o}rn, M. Hvam, and Peter Lodahl

TL;DR
This study investigates how the radiative decay rate of excitons in self-assembled InAs quantum dots varies with emission frequency, combining experimental measurements with theoretical modeling to understand wavefunction overlaps and strain effects.
Contribution
It provides the first detailed experimental and theoretical analysis of the frequency dependence of exciton radiative decay rates and wavefunction overlaps in quantum dots.
Findings
Frequency dependence of radiative decay rate measured across emission energies.
Comparison of experimental results with quantum optics theory models.
Qualitative explanation of wavefunction overlap variation due to electron and hole compressibility.
Abstract
We analyze time-resolved spontaneous emission from excitons confined in self-assembled quantum dots placed at various distances to a semiconductor-air interface. The modification of the local density of optical states due to the proximity of the interface enables unambiguous determination of the radiative and non-radiative decay rates of the excitons. From measurements at various emission energies we obtain the frequency dependence of the radiative decay rate, which is only revealed due to the separation of the radiative and non-radiative parts. It contains detailed information about the dependence of the exciton wavefunction on quantum dot size. The experimental results are compared to the quantum optics theory of a solid state emitter in an inhomogeneous environment. Using this model, we extract the frequency dependence of the overlap between the electron and hole…
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