Carbon Based Resistive Memory
Franz Kreupl, Rainer Bruchhaus, Petra Majewski, Jan B. Philipp, Ralf, Symanczyk, Thomas Happ, Christian Arndt, Mirko Vogt, Roy Zimmermann, Axel, Buerke, Andrew P. Graham, Michael Kund
TL;DR
This paper explores carbon as a novel material for resistive memory devices, comparing different allotropes and demonstrating high-speed switching and multi-level programming capabilities.
Contribution
It introduces carbon allotropes as new resistive memory materials and demonstrates their potential for high-density, multi-level non-volatile memory applications.
Findings
Successful high-speed switching demonstrated
Multi-level programming potential shown
Comparison of three carbon allotropes for memory use
Abstract
We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsAdvanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Transition Metal Oxide Nanomaterials