Theoretical derivation of the bi- and tri-molecular trion formation coefficients

TL;DR

This paper presents a theoretical derivation of bi- and tri-molecular trion formation coefficients in GaAs/AlGaAs quantum wells, considering phonon interactions and temperature dependence, revealing their equivalence for different charged excitons.

Contribution

It provides a novel theoretical derivation of trion formation coefficients including phonon interactions and temperature effects in quantum wells.

Findings

Bi- and tri-molecular formation rates depend on temperature.

Formation rates are equivalent for negatively and positively charged excitons.

Theoretical framework includes acoustic and optical phonon contributions.

Abstract

A theoretical investigation of the trion formation process from free carriers in a single GaAs/Al_{1-x}Ga_{x}As quantum well is presented. The mechanism for the formation process is provided by the interaction of the electrons and holes with phonons. The contributions from both the acoustic and optical phonons are considered. The dependence of both bi-molecular and tri-molecular formation rates on temperature is calculated. We demonstrate that they are equivalent for negatively and positively charged excitons.