Full counting statistics of crossed Andreev reflection

TL;DR

This paper derives the full counting statistics of charge transfer in a three-terminal device with superconducting and normal/ferromagnetic leads, revealing how different processes influence transport noise and correlations.

Contribution

It provides a comprehensive calculation of transport statistics including direct and crossed Andreev reflection, highlighting the effects of spin polarization and magnetization configurations.

Findings

Cross-correlation noise results from competing Andreev reflection and electron transfer.

Spin polarization affects the statistics of crossed Andreev reflection and electron transfer.

Transport statistics can be controlled via magnetization directions and voltage bias.

Abstract

We calculate the full transport counting statistics in a three-terminal tunnel device with one superconducting source and two normal-metal or ferromagnet drains. We obtain the transport probability distribution from direct Andreev reflection, crossed Andreev reflection, and electron transfer which reveals how these processes' statistics are determined by the device conductances. The cross-correlation noise is a result of competing contributions from crossed Andreev reflection and electron transfer, as well as antibunching due to the Pauli exclusion principle. For spin-active tunnel barriers that spin polarize the electron flow, crossed Andreev reflection and electron transfer statistics exhibit different dependencies on the magnetization configuration, and can be controlled by relative magnetization directions and voltage bias.