Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

TL;DR

This paper demonstrates a novel method to create a lateral magnetic anisotropy superlattice in a single (Ga,Mn)As layer using lithographically induced strain relaxation, enabling non-volatile magnetic states without external fields.

Contribution

It introduces a technique to engineer magnetic anisotropy patterns in a single layer via strain relaxation, leading to new device functionalities.

Findings

Two stable magnetic states at zero magnetic field

Resistive states depend on magnetic orientation

Lateral superlattice achieved in a single layer

Abstract

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.