Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction

TL;DR

This paper introduces a graphene-based tunneling transit-time device with an electrically induced p-i-n junction that can operate as a terahertz oscillator due to negative ac conductance from ballistic electron and hole transit.

Contribution

It presents a novel graphene heterostructure device with an electrically induced p-i-n junction capable of terahertz oscillation via tunneling and ballistic transit.

Findings

Demonstrates negative ac conductance in the terahertz range

Shows potential for graphene-based terahertz oscillators

Models ballistic electron and hole transit in the device

Abstract

We propose and analize a graphene tunneling transit time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer by the applied gate voltages of different polarity. The depleted i-section of the graphene layer (between the gates) serves as both the tunneling injector and the transit region. Using the developed device model, we demonstrate that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range, so that the device can serve as a terahertz oscillator.