Electrically Controlled Magnetic Memory and Programmable Logic based on Graphene/Ferromagnet Hybrid Structures

TL;DR

This paper introduces a novel non-volatile magnetic memory and programmable logic device using graphene/ferromagnet hybrid structures, where electrical control replaces magnetic fields for writing, enabling energy-efficient operation.

Contribution

It presents a new device concept combining electrical control of exchange bias and giant magneto-resistance effects in graphene/ferromagnet hybrids for memory and logic applications.

Findings

Electrical bias can write bits, replacing magnetic field control.

Interplay of exchange bias fields enables programmable logic.

Potential for low-energy, non-volatile memory devices.

Abstract

It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device conception. In such device an electric bias realizes the writing bits instead a magnetic field of remote word line with high energy consumption. Interplay of two graphene mediated exchange bias fields applied to different sides of free ferromagnet results in programable logic operations that depends on specific realization of the structure.