Phase-transition driven memristive system

TL;DR

This paper demonstrates a memristive response in Vanadium Dioxide driven by its insulator-to-metal phase transition, highlighting potential applications in high-density data storage and advancing phase transition-based memristive systems.

Contribution

It introduces a new memristive system based on phase transition phenomena in Vanadium Dioxide, expanding the mechanisms for memristor realization.

Findings

Memristive behavior observed in Vanadium Dioxide thin films.

Behavior driven by insulator-to-metal phase transition.

Potential applications in high-density information storage.

Abstract

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.