Optical manipulation of edge state transport in HgTe quantum wells in the quantum hall regime

TL;DR

This paper explores how optical methods can control edge state transport in HgTe quantum wells under quantum Hall conditions, providing insights applicable to similar phenomena in graphene.

Contribution

It introduces an effective low energy theory for HgTe quantum wells and demonstrates optical manipulation of edge states, expanding understanding of quantum Hall edge transport control.

Findings

Effective model matches detailed band structure within certain parameters

Optical selection rules enable manipulation of edge state transport

Findings are applicable to graphene edge current control

Abstract

We investigate an effective low energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter regime and the validity of the effective model is scrutinized. Optical transitions in HgTe quantum wells are analyzed. We find selection rules which we functionalize to optically manipulate edge state transport. Qualitatively, our findings equally apply to optical edge current manipulation in graphene.