Direct Measurement of Piezoelectric Response around Ferroelectric Domain Walls in Crystals with Engineered Domain Configuration

TL;DR

This study measures the nanoscale piezoelectric response near engineered ferroelectric domain walls, revealing a significant reduction in piezoelectric coefficient close to the walls, which advances understanding of relaxor ferroelectric materials.

Contribution

It provides the first direct nanoscale measurement of piezoelectric response around engineered domain walls in relaxor ferroelectrics.

Findings

Piezoelectric coefficient d33 is reduced near domain walls.

Reduction occurs within about 1 micrometer from the wall.

Findings aid in understanding giant piezoresponse mechanisms.

Abstract

We report the first investigation of the piezoelectric response on a nanoscale in the poled ferroelectric crystals with engineered configuration of domains. Piezoresponse force microscopy of tetragonal 0.63PMN-0.37PT relaxor-based ferroelectric crystals reviled that the d33 piezoelectric coefficient is significantly reduced within the distance of about 1 um from the uncharged engineered domain wall. This finding is essential for understanding the mechanisms of the giant piezoresponse in relaxor-based crystals and for designing new piezoelectric materials.