Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
J. H. Jiang, Y. Zhou, T. Korn, C. Sch\"uller, M. W. Wu

TL;DR
This study investigates electron spin relaxation in paramagnetic Ga(Mn)As quantum wells using a comprehensive microscopic approach, revealing nonmonotonic Mn concentration dependence and dominant relaxation mechanisms varying with doping and temperature.
Contribution
It provides a detailed microscopic analysis including all relevant scattering mechanisms, highlighting the complex Mn concentration and temperature dependence of spin relaxation in Ga(Mn)As quantum wells.
Findings
Spin relaxation dominated by DP mechanism in n-type wells.
Nonmonotonic Mn concentration dependence with a peak in relaxation time.
Different mechanisms dominate in p-type wells depending on Mn concentration and temperature.
Abstract
Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the - exchange scatterings, are explicitly included. The Elliot-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both -type and -type Ga(Mn)As quantum wells. For -type Ga(Mn)As quantum wells where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the DP mechanism in metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This behavior is because that the momentum scattering and the…
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