Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

TL;DR

This paper presents a solution-processed method to create large-area field effect transistors using dielectrophoretic alignment of carbon nanotubes, achieving high mobility and significant on-off ratios.

Contribution

It introduces a novel dielectrophoretic alignment technique for carbon nanotubes in FET fabrication, resulting in high-performance devices with superior mobility.

Findings

Field effect mobilities up to 123 cm2/Vs

On-off ratios up to 2×10^4

Successful removal of metallic nanotubes

Abstract

We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with on-off ratios up to ~ 2X10^4. The measured field effect mobilities are as high as 123 cm2/Vs, which is three orders of magnitude higher than typical solution processed organic FET devices.