A semi-analytical model of Bilayer Graphene Field Effect Transistor

TL;DR

This paper presents a semi-analytical model for bilayer graphene FETs that incorporates tunable energy gaps, self-polarization, and band-to-band tunneling, aiding in device design and performance optimization.

Contribution

It introduces a comprehensive analytical model for bilayer graphene FETs considering key physical effects, enabling better exploration of device parameters.

Findings

Band-to-band tunneling limits transistor performance.

Limited energy gap reduces Ion/Ioff ratio.

Model facilitates design optimization for bilayer graphene transistors.

Abstract

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self polarization, and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the limited achievable energy gap is not sufficient to obtain a large Ion/Ioff ratio.