Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)

TL;DR

This study demonstrates a method to grow long, homogeneous monolayer graphene ribbons on SiC wafers using a graphite cap to control growth kinetics, confirmed by multiple characterization techniques.

Contribution

Introduction of a graphite capping technique to produce large, uniform graphene ribbons on SiC with improved control over growth and characterization of their properties.

Findings

Graphene ribbons are about 300 microns long and 5 microns wide.

Raman spectroscopy indicates partial relaxation of thermal stress.

Optical differential transmission confirms monolayer graphene.

Abstract

We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphene ribbons. These ribbons fully occupy unusually large terraces on the step bunched SiC surface, as shown by AFM, optical microscopy and SEM. Raman spectrometry indicates that the thermal stress has been partially relaxed by wrinkles formation, visible in AFM images. In addition, we show that despite the low optical absorption of graphene, optical differential transmission can be successfully used to prove the monolayer character of the ribbons.