Frequency doubling and memory effects in the Spin Hall Effect

TL;DR

This paper predicts frequency doubling and memristive phase shifts in the spin Hall effect within inhomogeneous semiconductors, introducing new insights into spintronic system behaviors and potential frequency control methods.

Contribution

It introduces a novel prediction of frequency doubling and memristive phase shifts in the spin Hall effect for inhomogeneous semiconductors, expanding understanding of spintronic phenomena.

Findings

Frequency doubling in transverse voltage due to spin Hall effect.

Phase shift indicating memristive behavior in spintronic systems.

Alternative method for frequency doubling via inverse spin Hall effect.

Abstract

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.