Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

TL;DR

This study investigates how nitrogen-vacancy centers are distributed vertically in diamond after ion implantation and annealing, highlighting the influence of native nitrogen levels and electron depletion effects relevant for quantum device fabrication.

Contribution

It provides new insights into the vertical distribution of NV centers in diamond and the effects of native nitrogen concentration on their formation and properties.

Findings

NV distribution depends on native nitrogen levels

Spectral measurements show electron depletion effects

Results inform surface-proximate NV center creation for quantum devices

Abstract

Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.