Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (111) surfaces
Jaewan Chang, Yoon-Seok Park, Jong-Woo Lee, and Sang-Koog Kim

TL;DR
This study investigates the growth modes of SrRuO3 thin films on SrTiO3 (111) surfaces, demonstrating how growth conditions influence the transition from island to layer-by-layer growth, enabling precise interface control for device applications.
Contribution
It reveals how growth temperature and rate can be manipulated to control the growth mode of SrRuO3 on SrTiO3 (111), facilitating atomic-level interface engineering.
Findings
Growth mode transitions from island to layer-by-layer within ~9 unit cells.
Growth conditions can be tuned to achieve desired growth modes.
Controlled growth enables integration into oxide heterostructures.
Abstract
We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit cells, the dominant growth mode changes from island to layer-by-layer for the growth rate of 0.074 unit cells/sec and the growth temperature of 700 C. Moreover, in the course of growing SrRuO3 films, the governing growth mode of interest can be manipulated by changing the growth temperature and the growth rate, which change allows for the selection of the desired layer-by-layer mode. The present study thus paves the way for integrations of SrRuO3 thin layers into (111)-orientated oxide heterostructures, and hence multi-functional devices, requiring control of the sharp atomic-level interfaces and the layer-by-layer growth mode.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
