Resistance noise in electrically biased bilayer graphene

TL;DR

This study investigates how low-frequency resistance noise in bilayer graphene varies with its band structure, revealing a minimum noise level at zero band gap, and uses dual gating to explore electronic properties.

Contribution

It introduces a method to tune the band gap and neutrality points independently in bilayer graphene to study its electronic noise and related properties.

Findings

Resistance noise minimizes at zero band gap

Dual gating allows independent control of band gap and neutrality

Insights into charge localization and screening in bilayer graphene

Abstract

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.