Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices

TL;DR

This paper investigates oxide hetero-structure junctions, revealing stable charge injection and resistance switching linked to charge carrier motion, highlighting potential for novel oxide-based microelectronic devices.

Contribution

It introduces a new understanding of resistance switching in oxide hetero-structures related to charge carrier dynamics at interfaces.

Findings

Resistance and interface barriers change dramatically without electric fields.

Charge carriers can be trapped and released, affecting device properties.

Oxides show potential as functional materials in microelectronics.

Abstract

Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of semiconductor devices. Disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-structure oxide devices should associate with motion of charge carriers across interfaces. The results suggested that injected carriers should be still staying in devices and resulted in changes in properties, which guided to a carrier self-trapping and releasing picture in strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2 devices show that oxides as functional materials could be used in microelectronics with some novel properties, in which interface is very important.