Operation of Graphene Transistors at GHz Frequencies

TL;DR

This paper demonstrates graphene transistors operating at GHz frequencies, showing high cutoff frequencies and potential for high-speed electronics, with device performance improving as gate length decreases.

Contribution

It provides experimental evidence of GHz operation in graphene transistors and establishes the relationship between cutoff frequency and device parameters.

Findings

fT reaches 26 GHz for 150 nm gate length

Intrinsic current gain exhibits 1/f frequency dependence

fT is proportional to dc transconductance gm

Abstract

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.