Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system

TL;DR

This paper reports the discovery of independent magnetization switching in a hybrid system of ferromagnetic metal and semiconductor, enabling multiple resistance states useful for spintronic applications.

Contribution

It demonstrates that a ferromagnetic metal and semiconductor can be deposited together and switch magnetization independently, creating multi-state resistance devices.

Findings

Independent magnetization switching observed

Up to four non-volatile resistance states achieved

Potential for advanced spintronic devices

Abstract

We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states.