Bit storage by $360^\circ$ domain walls in ferromagnetic nanorings

TL;DR

This paper introduces a magnetic memory design using ferromagnetic nanorings where information is stored in the polarity of a 360° domain wall, enabling efficient switching via current-induced domain wall splitting and recombination.

Contribution

It presents a novel memory cell design utilizing 360° domain walls in nanorings for stable data storage and switching through current-driven domain wall manipulation.

Findings

Stable 360° domain walls encode bits.

Current can switch domain wall polarity.

Efficient read/write mechanism demonstrated.

Abstract

We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360$^\circ$ domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the $360^\circ$ domain wall splits into two charged $180^\circ$ walls, which then move to the opposite extreme of the ring to recombine into a $360^\circ$ wall of the opposite polarity.