Growth of GaAs nanowires on Au, Au / Pd, Ag, Ni, Ga, Cu, Al, Ti metal films

TL;DR

This study investigates the growth of GaAs nanowires on various metal films using vapor phase epitaxy, analyzing their structural properties and interfaces with different metals.

Contribution

It demonstrates direct growth of GaAs nanowires on multiple metal films and characterizes their crystalline structure and interfaces.

Findings

Nanowires grow directly on all tested metals.

Crystalline structure confirmed by TEM, originating from Au.

Provides insights into nanowire-metal interface growth.

Abstract

GaAs nanowires were grown by metalorganic vapor phase epitaxy on evaporated metal films (Au, Au / Pd, Ag, Ni, Ga, Cu, Al, Ti). The samples were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM). SEM images reveal that nanowires grow directly on the metals. TEM characterization shows crystalline nanowire (nw) structure originating from Au. Article presents state of the art about nanowire-metal interface growth and enumerates nanowire contacting methods with metals.